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Journal Articles

Investigation of SiO$$_2$$/SiC interface using positron annihilation technique

Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Ichimiya, Ayahiko

Materials Science Forum, 457-460(Part2), p.1301 - 1304, 2004/06

no abstracts in English

Journal Articles

Interface properties of 4H-SiC MOS structures studied by a slow positron beam

Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Ichimiya, Ayahiko

Materials Science Forum, 445-446, p.144 - 146, 2004/05

no abstracts in English

Journal Articles

Positron annihilation due to silicon vacancies in 3C and 6H SiC epitaxial layers induced by 1MeV electron irradiation

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Yoshikawa, Masahito; Kojima, Kazutoshi; Ito, Hisayoshi

Physica Status Solidi (B), 223(2), p.R8 - R10, 2001/01

https://doi.org/10.1002/1521-3951(200101)223:23.0.CO;2-N

no abstracts in English

Journal Articles

Depth profiles of defects in Ar-ion-irradiated steels determined by a least-squares fit of S parameters from variable-energy positron annihilation

; *; *; Ito, Yasuo*

Applied Surface Science, 85(2), p.229 - 238, 1995/01

https://doi.org/10.1016/0169-4332(94)00336-X
 Times Cited Count：11 Percentile：57.83(Chemistry, Physical)

no abstracts in English

Journal Articles

Depth profiles of defects in C-ion-irradiated steel determined by a least-squares fit of S parameters from variable-energy positron annihilation

; Takamura, Saburo; *; *

Physical Review B, 46(22), p.14411 - 14418, 1992/12

https://doi.org/10.1103/PhysRevB.46.14411
 Times Cited Count：6 Percentile：39.32(Materials Science, Multidisciplinary)

no abstracts in English

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